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US 2015/0311340 A1Published application
Source/Drain Profile for FinFET
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTa-Chun Ma, Cheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann
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Abstract
An embodiment is a FinFET device. The FinFET device comprises a fin, a first source/drain region, a second source/drain region, and a channel region. The fin is raised above a substrate. The first source/drain region and the second source/drain region are in the fin. The channel region is laterally between the first and second source/drain regions. The channel region has facets that are not parallel and not perpendicular to a top surface of the substrate.
Claims20
A device comprising:
- a fin raised above a substrate;
- a first source/drain region in the fin;
- a second source/drain region in the fin;
- a channel region in the fin laterally between the first and second source/drain regions, the channel region having channel facets that are not parallel and not perpendicular to a top surface of the substrate;
- a gate dielectric over the channel region;
- a gate electrode over the gate dielectric, the gate electrode directly overlying an intersection of at least two of the channel facets;
- and
- gate spacers on opposing sides of the gate electrode and gate dielectric.
5 more elements
A device comprising:
- a fin raised above a substrate;
- a first source/drain region in the fin;
- a second source/drain region in the fin;
- and
- a channel region between the first and second source/drain regions, the channel region and the first source/drain region forming a first sidewall, the first sidewall having a first facet and a second facet, the first and second facets diverging from each other along a longitudinal axis of the fin in a direction away from the channel region, the channel region and the second source/drain region forming a second sidewall, the second sidewall having a third facet and a fourth facet, the third and fourth facets diverging from each other along the longitudinal axis of the fin in a direction away from the channel region.
2 more elements
A method for a FinFET device, the method comprising:
- forming a fin on a substrate;
- etching recesses into the fin, wherein the etching the recesses forms etch control sections laterally adjacent the recesses, the etch control sections laterally between a channel region and the respective recess;
- and
- etching the etch control sections, wherein the etching the etch control sections forms facets in the etch control sections and the channel region, the facets being not parallel and not perpendicular to a top surface of the substrate.
1 more element
Dependencies are inferred from the claim text.