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US 2015/0311338 A1Published application
Semiconductor device including an n-well structure
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsJeoung Mo KOO, Purakh Raj VERMA, Guowei ZHANG
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Abstract
A device comprising a p-type base region, and a p-type region formed over the p-type base region and in contact with the p-type base region is disclosed. The device also includes an n-well region surrounded by the p-type region, wherein the n-well is formed from an n-type epitaxial layer and the p-type region is formed by counter-doping the same n-type epitaxial layer.
Claims20
A device comprising:
- a substrate without doped regions which serve as buried doped regions, wherein the substrate comprises a planar top surface;
- and
- a doped epitaxial layer having a planar top epitaxial surface disposed over and contacts the planar top surface of the substrate, wherein the doped epitaxial layer comprises
- a first polarity type doped region, the first polarity type doped region corresponds to a device isolation well and a thickness of the doped epitaxial layer defines a depth of the device isolation well, and
- a second polarity type doped region surrounds the first polarity type doped region and extends from the planar top epitaxial surface.
2 more elements
A device comprising:
- a substrate without doped regions which serve as buried doped regions, wherein the substrate comprises a planar top surface;
- and
- a doped epitaxial layer having a planar top epitaxial surface disposed over and contacts the planar top surface of the substrate, wherein the doped epitaxial layer comprises
- a first polarity type doped region, the first polarity type doped region corresponds to a device isolation well and a thickness of the doped epitaxial layer defines a depth of the device isolation well, and
- a first second polarity type doped region surrounds the first polarity type doped region and extends from the planar top epitaxial surface to at least the planar top surface of the substrate.
2 more elements
Dependencies are inferred from the claim text.