US 2015/0311335 A1 · STRUCTURE AND METHOD FOR FINFET DEVICE

Abstract

The present disclosure provides a fin-like field-effect transistor (FinFET) device. The device includes a substrate having a first region, a second region and a third region. The first region includes a first fin structure, a first high-k (HK)/metal gate (MG) stack wrapping over an upper portion of the first fin structure and a first source/drain features, separated by the first HK/MG stack, over the recessed first fin structure. The second region includes a second fin structure, the first source/drain features over a portion of the recessed second fin structure. The third region includes a dummy gate stack over the second fin structure and the two first regions are separated by the second region, or by the third region.

Claims21

Dependent claims

A fin-like field-effect transistor (FinFET) device comprising:

a substrate having two first regions, a second region and a third region;
wherein each of the first regions includes:
a first fin structure having a first semiconductor material layer as its upper portion, a second semiconductor material layer, with a semiconductor oxide feature at its outer layer, as its lower portion;
a first high-k (HK)/metal gate (MG) stack over the substrate, including wrapping over an upper portion of the first fin structure;
and
first source/drain features, separated by the first HK/MG stack, over the first fin structure;
wherein the second region includes:
a second fin structure having the first semiconductor material layer as its upper portion, the second semiconductor material layer as its bottom portion;
the first source/drain features over a portion of the second fin structure, which has a recessed upper portion;
and
wherein the third region includes:
a dummy gate stack over the second fin structure;
and
wherein the two first regions are separated by the second region, or by the third region.

11 more elements

A fin-like field-effect transistor (FinFET), comprising:

a substrate;
a first active device region in the substrate, including:
a first gate region;
a first fin structure in the first gate region, wherein the first fin structure includes:
a silicon (Si) layer as its upper portion;
and
a silicon germanium (SiGe) layer, with a silicon germanium oxide (SiGeO) feature at its outer layer, as its bottom portion;
a first subset of a first sour/drain (S/D) region, adjacent to the first gate region;
a recessed first fin structure in the first subset of the first S/D region;
a second subset of the first S/D region, adjacent to the first gate region;
and
a second fin structure in the second subset of the first S/D region, wherein the second fin structure includes:
a recessed Si layer as its upper portion;
and
the SiGe layer as its bottom portion;
and
a first dummy device region between two adjacent first active device regions, wherein the first dummy device region includes:
a third fin structure, having the Si layer as its upper portion and the SiGe layer as its bottom portion.

15 more elements

A fin-like field-effect transistor (FinFET) device, comprising:

a substrate;
a first fin structure over the substrate, wherein the first fin structure includes a first semiconductor material layer as its upper portion and a second semiconductor material layer as its lower portion, and wherein the lower portion of the first fin structure includes an oxidation of the second semiconductor material at its outer layer;
a second fin structure over the substrate, wherein the second fin structure includes the first semiconductor material layer as its upper portion and the second semiconductor material layer as its bottom portion, and wherein the bottom portion of the second fin structure does not include the oxidation of the second semiconductor material at its outer layer;
a first gate stack over the substrate and wrapping over a portion of the first fin structure;
and
first source/drain features over the first fin structure and separated by the first gate stack.

3 more elements

Dependencies are inferred from the claim text.

Structure and method for finfet device

Life of this patent

Structure and method for finfet device

Life of this patent

Abstract

Claims21