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US 2015/0311334 A1Published application
Semiconductor device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsChang Su JANG, Ji Hye KIM, Kyu Hyun MO, Dong Soo SEO, Sun Jae YOUN
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Abstract
A semiconductor device may include a drift layer having a first conductivity-type; a body region having a second conductivity-type and disposed on the drift layer; first semiconductor regions having the second conductivity-type and disposed to be spaced apart from each other below the drift layer; and second semiconductor regions having the first conductivity-type and disposed between the first semiconductor regions below the drift layer.
Claims13
A semiconductor device, comprising:
- a drift layer having a first conductivity-type;
- a body region having a second conductivity-type and disposed on the drift layer;
- first semiconductor regions having the second conductivity-type and disposed to be spaced apart from each other below the drift layer;
- and
- second semiconductor regions having the first conductivity-type and disposed between the first semiconductor regions below the drift layer.
2 more elements
A semiconductor device, comprising:
- a drift layer having a first conductivity-type;
- a body region having a second conductivity-type and disposed on the drift layer;
- first semiconductor regions having the second conductivity-type and second semiconductor regions having the first conductivity-type, the first and second semiconductor regions being alternately disposed below the drift layer.
Dependencies are inferred from the claim text.