Back to results
US 2015/0311333 A1Published application
Semiconductor device and method of fabricating semiconductor device
AssigneeFujitsu Limited
InventorShirou OZAKI
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconductor device may form a nitride semiconductor layer on a substrate, form a first insulator layer on the nitride semiconductor layer by steam oxidation of ALD, form a second insulator layer on the first insulator layer by oxygen plasma oxidation of ALD, form a gate electrode on the second insulator layer, and form a source and drain electrodes on the nitride semiconductor layer. The nitride semiconductor layer may include a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer.
Claims13
A semiconductor device comprising:
- a nitride semiconductor layer formed on a substrate;
- an insulator formed on the nitride semiconductor layer;
- a gate electrode formed on the insulator layer;
- and
- a source electrode and a drain electrode in contact with the nitride semiconductor layer,
- wherein the nitride semiconductor layer includes a first semiconductor layer formed on the substrate, and a second semiconductor layer formed on the first semiconductor layer,
- wherein the insulator layer includes a first insulator layer formed on the second semiconductor layer, and a second insulator layer formed on the first insulator layer, and
- wherein the second insulator layer has a density higher than that of the first insulator layer.
5 more elements
A semiconductor device comprising:
- a nitride semiconductor layer formed on a substrate;
- an insulator formed on the nitride semiconductor layer;
- a gate electrode formed on the insulator layer;
- and
- a source electrode and a drain electrode formed on the nitride semiconductor layer,
- wherein the nitride semiconductor layer includes a first semiconductor layer formed on the substrate, and a second semiconductor layer formed on the first semiconductor layer, and
- wherein a ratio of oxygen atoms with respect to metal atoms included in the nitride semiconductor layer, in a vicinity of an interface between the nitride semiconductor layer and the insulator layer, is 0.4 or lower.
4 more elements
Dependencies are inferred from the claim text.