Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• preparing a substrate and forming a grounded electrode on a rear side of the substrate;
• depositing a semiconductor layer on a front side of the substrate, the semiconductor layer including an enclosed active region and an inactive region which is outside the active region;
• forming a plurality of source electrodes in the active region and a drain electrode including a plurality of first portions disposed in the active region and a second portion disposed in the inactive region, the plurality of first portions of the drain electrode each being disposed between adjacent source electrodes;
• forming a gate electrode including a plurality of first portions disposed in the active region and a second portion disposed in the inactive region, the plurality of first portions of the gate electrode each being disposed between one of plurality of the source electrodes and one of the plurality of first portions of the drain electrode which are adjacent to each other;
• forming a plurality of source electrode pads having the same number as the plurality of source electrodes, the plurality of source electrode pads being disposed in the inactive region and each being connected to a corresponding source electrode directly;
• and
• forming a plurality of through holes electrically connecting the plurality of source electrodes and the grounded electrode respectively in the plurality of source electrode pads.