Back to results
US 2015/0311329 A1Published application
Field effect transistor
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsSATOSHI NAKAZAWA, TETSUZO UEDA
Life of this patent
Estimating the term…
Abstract
Provided is a field-effect transistor (FET) that achieves compatibility between a higher current density and lower contact resistance and exhibits excellent properties, and a method for producing the FET. The FET includes: a channel layer above a substrate; an InAlN layer above the channel layer; an InxAlyGa1-(x+y)N layer on the InAlN layer, where 0<x<1,0<y<1, and x+y<1; and a source electrode and a drain electrode formed on the InxAlyGa1-(x+y)N layer.
Claims20
A field-effect transistor comprising:
- a GaN layer above a substrate;
- an InAlN layer above the GaN layer;
- an InxAlyGa1-(x+y)N layer on the InAlN layer, where 0<x<1, 0<y<1, and x+y<1;
- and
- ohmic electrodes on the InxAlyGa1-(x+y)N layer.
2 more elements
A field-effect transistor comprising:
- a GaN layer above a substrate;
- an InxAlyGa1-(x+y)N layer above the GaN layer, where 0<x<1, 0<y<1, and x+y<1;
- an InAlN layer on the InxAlyGa1-(x+y)N layer;
- and
- ohmic electrodes on the InxAlyGa1-(x+y)N layer.
2 more elements
Dependencies are inferred from the claim text.