Itc-igbt and manufacturing method therefor
AssigneesInstitute of Microelectronics, Chinese Academy of Sciences, Shanghai Lianxing Electronics Co., Ltd., Jiangsu Cas Igbt Technology Co., Ltd.
InventorsZhenxing WU, Yangjun ZHU, Xiaoli TIAN, Shuojin LU
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Abstract
An ITC-IGBT and a manufacturing method therefor. The method comprises: providing a heavily doped substrate, forming a GexSi1-x/Si multi-quantum well strained super lattice layer on the surface of the heavily doped substrate, and forming a lightly doped layer on the surface of the GexSi1-x/Si multi-quantum well strained super lattice layer. The GexSi1-x/Si multi-quantum well strained super lattice layer is formed on the surface of the heavily doped substrate through one step, simplifying the production process of the ITC-IGBT.
Claims17
A method for fabricating an ITC-IGBT, comprising:
- preparing a heavily doped substrate;
- forming a GexSi1-x/Si multiple quantum well strained superlattice layer on a surface of the heavily doped substrate by means of the molecular beam epitaxy process;
- and
- forming a lightly doped layer on a surface of the GexSi1-x/Si multiple quantum well strained superlattice layer.
An ITC-IGBT, comprising:
- a collector region;
- a GexSi1-x/Si multiple quantum well strained superlattice layer located on a surface of the collector region;
- and
- a lightly doped layer located on a surface of the GexSi1-x/Si multiple quantum well strained superlattice layer.
Dependencies are inferred from the claim text.