Igbt structure on sic for high performance
AssigneeCree, Inc.
InventorQingchun Zhang
Life of this patent
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Abstract
An IGBT device includes an IGBT stack including a first surface and a second surface opposite the first surface, a collector contact over the first surface of the IGBT stack, a gate contact on the second surface of the IGBT stack, and an emitter contact on the second surface of the IGBT stack. The IGBT stack includes an injector region, which provides the first surface of the IGBT stack, a drift region over the injector region opposite the first surface, a pair of junction implants in the IGBT stack along the second surface of the IGBT stack, and a field termination region between the pair of junction implants in the IGBT stack along the second surface of the IGBT stack.
Claims30
An insulated gate bipolar transistor (IGBT) device comprising:
- an IGBT stack comprising:
- an injector region, the injector region providing a first surface of the IGBT stack;
- a drift region over the injector region opposite the first surface;
- a pair of junction implants in the IGBT stack along a second surface of the IGBT stack, which is opposite the first surface;
- a junction field effect transistor (JFET) region between the pair of junction implants along the second surface of the IGBT stack, wherein a doping concentration of the JFET region is different from a doping concentration of the drift region;
- and
- a field termination region between the pair of junction implants and in the JFET region;
- a collector contact over the first surface;
- and
- a gate contact and an emitter contact on the second surface.
A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising:
- providing an IGBT stack including an injector region and a drift region over the injector region, the injector region providing a first surface of the IGBT stack opposite the drift region;
- providing a pair of junction implants in the IGBT stack along a second surface of the IGBT stack, which is opposite the first surface;
- providing a junction field effect transistor (JFET) region in the IGBT stack between the pair of junction implants along the second surface of the IGBT stack;
- providing a field termination region between the pair of junction implants in the JFET region;
- providing a collector contact over the first surface;
- and
- providing a gate contact and an emitter contact on the second surface.
Dependencies are inferred from the claim text.