US 2015/0311322 A1 · METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY

Abstract

A method of manufacturing transistor having a first and second thin film transistor by creating the second thin film transistor by forming a second gate of the second thin film transistor on a substrate, depositing an insulating layer and a semiconductor layer in order to cover the second gate. A photoresist layer is deposited above the semiconductor layer and exposed. The semiconductor layer and the insulating layer are etched, thereby forming a second active layer of the second thin film transistor and a first connection window disposed above the second gate. A second source and a second drain of the second thin film transistor is deposited above the insulating layer and the second active layer. The present method enables the manufacturing of an organic light emitting diode display. The method reduces the times of using a photomask, thereby saving the manufacture time, improving the productivity and economizing the manufacture cost.

Claims20

Dependent claims

A method of manufacturing a thin film transistor, comprising:

depositing a first thin film transistor and a second thin film transistor, wherein the depositing of the second thin film transistor comprising:
a) forming a second gate of the second thin film transistor on a substrate;
b) depositing an insulating layer and a semiconductor layer in order above the substrate, wherein the insulating layer and the semiconductor layer cover the second gate;
c) depositing a photoresist layer above the semiconductor layer and exposing the photoresist layer;
etching the semiconductor layer and the insulating layer, thereby forming a second active layer of the second thin film transistor and a first connection window disposed above the second gate;
d) depositing a second source and a second drain of the second thin film transistor above the insulating layer and the second active layer.

3 more elements

A method of manufacturing an organic light emitting diode display, comprising:

depositing a thin film transistor on a substrate, wherein the method of manufacturing a thin film transistor comprising:
depositing the first thin film transistor and the second thin film transistor, the depositing of the second thin film transistor comprising:
a) forming a second gate of the second thin film transistor on the substrate;
b) depositing an insulating layer and a semiconductor layer in order above the substrate, wherein the insulating layer and the semiconductor layer cover the second gate;
c) depositing a photoresist layer above the semiconductor layer and exposing the photoresist layer;
etching the semiconductor layer and the insulating layer, thereby forming a second active layer of the second thin film transistor and a first connection window disposed above the second gate;
d) depositing a second source and a second drain of the second thin film transistor above the insulating layer and the second active layer.

4 more elements

Dependencies are inferred from the claim text.

Method of manufacturing thin film transistor and organic light emitting diode display

Life of this patent

Method of manufacturing thin film transistor and organic light emitting diode display

Life of this patent

Abstract

Claims20