Method of Manufacturing a Semiconductor Device
AssigneeInfineon Technologies AG
InventorsAndreas Meiser, Till Schloesser, Thorsten Meyer
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Abstract
A method of manufacturing a semiconductor device includes forming a transistor in a semiconductor substrate having a first main surface. The transistor is formed by forming a source region, forming a drain region, forming a channel region, forming a drift zone, and forming a gate electrode adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the first main surface, between the source region and the drain region. Forming the semiconductor device further includes forming a conductive layer, a portion of the conductive layer being disposed beneath the gate electrode and insulated from the gate electrode.
Claims4
A method of manufacturing a semiconductor device including forming a transistor in a semiconductor substrate having a first main surface, wherein forming the transistor comprises:
- forming a source region;
- forming a drain region;
- forming a channel region;
- forming a drift zone;
- and
- forming a gate electrode adjacent to at least two sides of the channel region, the channel region and the drift zone being disposed along a first direction parallel to the first main surface, between the source region and the drain region,
- and wherein forming the semiconductor device further comprises forming a conductive layer, a portion of the conductive layer being disposed beneath the gate electrode and insulated from the gate electrode.
Dependencies are inferred from the claim text.