Semiconductor devices utilizing partially doped stressor film portions

A method of fabricating a semiconductor device, comprising:

• etching an opening in a top surface of a semiconductor substrate, wherein the opening is defined by sidewalls of a length extending from the top surface of the semiconductor substrate to a bottom surface of the opening;
• forming a lower portion of semiconductor material disposed on the bottom surface and extending upwardly along sidewalls of the opening such that the lower portion is disposed on the length of each the sidewalls, wherein the forming the lower portion introduces a first level of dopant impurities;
• forming an intermediate portion of semiconductor material on the lower portion, wherein forming the intermediate portion introduces a second level of dopant impurities greater than the first level;
• and
• forming an upper portion of semiconductor material on the intermediate portion, wherein the growing the upper portion introduces a third level of dopant impurities greater than the second level of dopant impurities.

A method for forming a semiconductor device, said method comprising:

• providing a semiconductor substrate;
• forming a gate structure over a transistor channel formed in said semiconductor substrate;
• forming an opening in said semiconductor substrate along each of opposed sides of said gate structure;
• and
• selectively depositing SiGe in said openings by first depositing SiGe not doped with a first dopant impurity then depositing SiGe doped with said first dopant impurity to fill said openings.