Method of Manufacturing a High Breakdown Voltage III-Nitride Device

Abstract

A method of manufacturing a semiconductor device includes forming a semiconductor body including a compound semiconductor material on a substrate, the compound semiconductor material having a channel region, forming a source region extending to the compound semiconductor material, forming a drain region extending to the compound semiconductor material and spaced apart from the source region by the channel region, and forming an insulating region buried in the semiconductor body below the channel region between the compound semiconductor material and the substrate in an active region of the semiconductor device such that the channel region is uninterrupted by the insulating region. The active region includes the source, the drain and the channel region. The insulating region is discontinuous over a length of the channel region between the source region and the drain region.

Dependencies are inferred from the claim text.