Spin mosfet

An MOSFET comprising:

• a semiconductor layer;
• a source electrode and a drain electrode each including a magnetic layer provided on the semiconductor layer so as to be separated from each other, a junction resistance between the source electrode and the semiconductor layer being greater than a junction resistance between the drain electrode and the semiconductor layer;
• a gate insulating film provided on a region of the semiconductor layer to serve as a channel between the source electrode and the drain electrode;
• and
• a gate electrode provided on the gate insulating film,
• wherein the MOSFET is of n-channel type, and the source electrode and the drain electrode contain at least one magnetic material selected from the group consisting of Co2FeAl1-xSix (0.5≦x≦1.0), Co2Mn1-xFexSi (0.25≦x≦1.0), Co2MnxTi1-xGe (0≦x≦0.5), Co2Cr1-xFexAl (0.75≦x≦1.0), Mn2CoSn, and Co2TiAl, or
• wherein the MOSFET is of p-channel type, and the source electrode and the drain electrode contain at least one magnetic material selected from the group consisting of Co2FeAl1-xSix (0≦x<0.5), Co2Mn1-xFexSi (0≦x<0.25), Co2MnxTi1-xGe (0.5<x≦1.0), Co2Cr1-xFexAl (0≦x<0.75), and CoFeMnX (where X is at least one element selected from the group consisting of Al, Si, Ge, and Ga).