Semiconductor devices and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHauk Han, Yong-IL Kwon, JungSuk Oh, Tae sun Ryu, Jeonggil Lee
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Abstract
A semiconductor device includes a lower insulating pattern on a semiconductor substrate, a lower gate pattern on the lower insulating pattern and formed of a doped polysilicon layer, a residual insulating pattern with an opening exposing a portion of a top surface of the lower gate pattern, an upper gate pattern on the residual insulating pattern, the upper gate pattern filling the opening, and a diffusion barrier pattern in contact with the portion of the top surface of the lower gate pattern and extending between the residual insulating pattern and the upper gate pattern.
Claims11
A semiconductor device, comprising:
- a lower insulating pattern disposed on a substrate;
- a lower gate pattern disposed on the lower insulating pattern;
- a residual insulating pattern disposed on the lower gate pattern;
- a first upper gate pattern disposed on the residual insulating pattern, wherein an opening is formed in the first upper gate pattern, the residual insulating pattern and a portion of the lower gate pattern;
- a diffusion barrier pattern disposed on an upper surface of the first upper gate pattern and a side surface of the first upper gate pattern, wherein the side surface of the first upper gate pattern is adjacent to the opening;
- and
- a second upper gate pattern disposed on the diffusion barrier pattern and filling the opening,
- wherein an upper surface of the second upper gate pattern has a concave and convex structure.
Dependencies are inferred from the claim text.