Semiconductor device

An oxide semiconductor film comprising a crystalline part,

• wherein the oxide semiconductor film includes carbon, a first metal, a second metal, and a third metal,
• wherein the first metal is indium, the second metal is zinc, and the third metal is a different metal from indium and zinc,
• wherein a size of the crystalline part is less than or equal to 10 nm, and
• wherein a plurality of circumferentially distributed spots are observed in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφ in a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film.

An oxide semiconductor film comprising a crystalline part

• wherein the oxide semiconductor film includes carbon, a first metal, a second metal, and a third metal,
• wherein the first metal is indium, the second metal is zinc, and the third metal is a different metal from indium and zinc,
• wherein a size of the crystalline part is less than or equal to 10 nm,
• wherein a plurality of circumferentially distributed spots are observed in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφ in a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film, and
• wherein a crystalline peak is not observed in an XRD spectrum with respect to the oxide semiconductor film.

An oxide semiconductor film comprising a crystalline part,

• wherein the oxide semiconductor film includes carbon, a first metal, a second metal, and a third metal,
• wherein the first metal is indium, the second metal is zinc, and the third metal is a different metal from indium and zinc,
• wherein a size of the crystalline part is less than or equal to 10 nm,
• wherein a plurality of circumferentially distributed spots are observed in a nanobeam electron diffraction pattern in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφ in a cross-sectional direction of the measurement area of a film thinned from the oxide semiconductor film to be greater than 10 nm and less than or equal to 50 nm, and
• wherein spots having order of regularity that represents a crystal state in which crystal parts are aligned with a specific plane are observed in the measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφ in the cross-sectional direction of the measurement area of a film thinned from the oxide semiconductor film to be less than or equal to 10 nm.