Semiconductor device and semiconductor device manufacturing method
AssigneeFuji Electric Co., Ltd.
InventorsYuichi ONOZAWA, Hiroshi TAKISHITA, Takashi YOSHIMURA
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Abstract
A front surface element structure is formed on the front surface side of an n−-type semiconductor substrate. Then defects are formed throughout an n−-type semiconductor substrate to adjust a carrier lifetime. Hydrogen ions are ion-implanted from a rear surface side of the n−-type semiconductor substrate, and a hydrogen implanted region having a hydrogen concentration higher than a hydrogen concentration of a bulk substrate is formed in the surface layer of a rear surface side of the n−-type semiconductor substrate.
Claims21
A semiconductor device in which a lifetime of carriers is locally controlled, comprising:
- a first conductivity type semiconductor substrate having defects, the defects having dangling bonds generated by breaking of inter-atomic bonds of atoms constituting the semiconductor substrate;
- and
- a high hydrogen concentration region having hydrogen atoms and which is formed in a rear surface side of the semiconductor substrate, and has a higher hydrogen concentration than that of a front surface side of the semiconductor substrate,
- wherein in the high hydrogen concentration region,
- defects are fewer than those in a region of the semiconductor substrate other than the high hydrogen concentration region, and
- a lifetime of carriers is longer than that in the front surface side of the semiconductor substrate.
A manufacturing method for a semiconductor device in which a lifetime of carriers is locally controlled, comprising:
- an electron beam irradiation step of irradiating an electron beam from a front surface side of a semiconductor substrate and generating dangling bonds by breaking inter-atomic bonds of atoms constituting the semiconductor substrate so as to form defects in first and second regions of the semiconductor substrate;
- and
- before or after the electron beam irradiation step, a first implantation step of implanting hydrogen atoms from a rear surface side of the semiconductor substrate so that a hydrogen concentration in the rear surface side of the semiconductor substrate is higher than a hydrogen concentration of the semiconductor substrate before starting the manufacturing of the semiconductor device, the hydrogen atoms being implanted into the first region but not the second region so that the dangling bonds of the defects in the first region are terminated by the hydrogen atoms such that a lifetime of carriers in the first region is longer than a lifetime of carriers in the second region.
A semiconductor device manufacturing method, comprising:
- an element surface structure forming step of forming an element structure on one principal surface of a semiconductor substrate;
- a charged particle beam irradiation step of irradiating a charged particle beam onto the semiconductor substrate and generating dangling bonds by breaking inter-atomic bonds of atoms constituting the semiconductor substrate so as to form defects in first and second regions of the semiconductor substrate;
- and
- a first implantation step of implanting hydrogen atoms from another principal surface of the semiconductor substrate so that a hydrogen concentration on another principal surface side of the semiconductor substrate is higher than a hydrogen concentration of the semiconductor substrate before starting the manufacturing of the semiconductor device, the hydrogen atoms being implanted into the first region but not the second region so that the dangling bonds of the defects in the first region are terminated by the hydrogen atoms, so as to make a lifetime of carriers in the first region be longer than a lifetime of carriers in the second region.
Dependencies are inferred from the claim text.