Semiconductor device and method for producing same
AssigneeRohm Co., Ltd.
InventorsMasatoshi AKETA, Yuta YOKOTSUJI
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Abstract
A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.
Claims23
A semiconductor device comprising:
- a semiconductor layer made of a wide bandgap semiconductor;
- and
- a Schottky electrode being in contact with a front surface of the semiconductor layer through a contact hole,
- the semiconductor layer including:
- a drift layer that forms the front surface side of the semiconductor layer;
- and
- a high-resistance layer formed on a surface layer portion of the drift layer such that the high-resistance layer defines a part of the semiconductor layer as a unit cell under the contact hole, the high-resistance layer having resistance higher than the drift layer, wherein
- the Schottky electrode includes a second electrode formed on the unit cell and a first electrode covering the second electrode and formed over the high-resistance layer.
A semiconductor device comprising:
- a semiconductor layer made of a wide bandgap semiconductor;
- and
- a Schottky electrode being in contact with a front surface of the semiconductor layer through a contact hole,
- the semiconductor layer including:
- a drift layer that forms the front surface of the semiconductor layer;
- and
- a high-resistance layer formed on a surface layer portion of the drift layer such that the high-resistance layer defines a part of the semiconductor layer as a unit cell under the contact hole, the high-resistance layer having resistance higher than the drift layer, wherein
- the drift layer has a first part of a first conductivity type on which a first electric field is exerted when a reverse voltage is applied and a second part of the first conductivity type on which a second electric field relatively higher than the first electric field is exerted
- the Schottky electrode includes a first electrode that forms a first Schottky barrier between the first part and the first electrode and a second electrode that forms a second Schottky barrier relatively higher than the first Schottky barrier between the second part and the second electrode.
Dependencies are inferred from the claim text.