Integrated circuits with resistor structures formed from gate metal and methods for fabricating same

A method for fabricating an integrated circuit, the method comprising:

• providing a semiconductor substrate with a resistor area and a transistor area;
• forming a trench in the resistor area;
• depositing a gate metal over the semiconductor substrate and in the trench;
• etching the gate metal to form a resistor structure in the resistor area and to form a gate structure in the transistor area;
• and
• forming contacts to the resistor structure in the resistor area.

An integrated circuit comprising:

• a semiconductor substrate with a resistor area and a transistor area, wherein a trench having sidewalls is defined in the resistor area;
• a gate structure formed from a gate metal in the transistor area;
• and
• a resistor structure formed from the gate metal in the resistor area, wherein the gate metal includes non-planar portions formed along the sidewalls of the trench in the resistor area.