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US 2015/0311255 A1Published application
Variable resistive memory device including vertical channel pmos transistor and method of manufacturing the same
AssigneeSK hynix Inc.
InventorNam Kyun PARK
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Abstract
A semiconductor device having a vertical channel, a variable resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device having a vertical channel includes a vertical pillar formed on a semiconductor substrate and including an inner portion and an outer portion surrounding the inner portion, junction regions formed in the outer portion of the vertical pillar, and a gate formed to surround the vertical pillar. The inner portion of the vertical pillar has a lattice constant smaller than that of the outer portion of the vertical pillar.
Claims9
A semiconductor device, comprising
- a pillar extending substantially perpendicular from a semiconductor substrate, the pillar including an inner portion extending along a longitude direction of the pillar and an outer portion surrounding entire surface of the inner portion;
- a drain formed in the outer portion corresponding to an upper outer region of the pillar;
- a source formed in the outer portion corresponding to a lower outer region of the pillar;
- a channel region formed in the inner portion;
- a gate surrounding the pillar to form a cylinder shape;
- a gate insulating layer formed between the gate and the pillar,
- wherein the inner portion includes a semiconductor layer having a lattice constant that is smaller than a lattice constant of the outer portion.
4 more elements
Dependencies are inferred from the claim text.