Back side illuminated image sensor with deep trench isolation structures and self-aligned color filters
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Lee, Yun-Wei Cheng, Yung-Lung Hsu, Hsin-Chi Chen
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Abstract
A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
Claims21
A semiconductor image sensor device, comprising:
- a substrate having a first side and a second side that is opposite the first side;
- an interconnect structure disposed over the first side of the substrate;
- a plurality of radiation-sensing regions located in the substrate, the radiation-sensing regions being configured to sense radiation that enters the substrate from the second side;
- and
- a plurality of isolation structures that are each disposed between two respective radiation-sensing regions, wherein the isolation structures protrude out of the second side of the substrate.
A semiconductor image sensor device, comprising:
- a substrate having a front side and a back side opposite the front side;
- an interconnect structure disposed over the front side of the substrate;
- a plurality of pixels disposed in the substrate, the pixels being configured to detect light that enters the substrate through the back side;
- a dielectric layer disposed over the back side of the substrate;
- and
- a plurality of light-reflective components that each have:
- a first segment extending through the dielectric layer and extending at least partially into the substrate;
- and
- a second segment protruding out of the dielectric layer from the back side;
- wherein the pixels are each disposed between two respective light-reflective components.
13-20. (canceled)
A semiconductor image sensor device, comprising:
- a substrate having a plurality of radiation-sensing regions formed therein, the substrate having a first side and a second side;
- a dielectric layer over the second side of the substrate;
- a plurality of trenches, the trenches extending through the dielectric layer and at least partially through the substrate;
- a plurality of isolation structures in the trenches, wherein portions of the isolation structures protrude out of the dielectric layer.
Dependencies are inferred from the claim text.