Method and apparatus for forming back side illuminated image sensors with embedded color filters

A semiconductor image sensor device, comprising:

• a substrate having a front side and a back side that is opposite the front side;
• an interconnect structure disposed over the first side of the substrate;
• a plurality of pixels located in the substrate, the pixels each being configured to detect light that enters the substrate from the back side;
• one or more layers disposed over the back side of the substrate;
• a plurality of light-reflective structures disposed over the one or more layers, wherein the light-reflective structures are each vertically aligned with a respective portion of the substrate located between two adjacent pixels, and wherein the one or more layers and the plurality of light-reflective structures collectively define a plurality of openings;
• and
• a plurality of color filters that are disposed in the openings.

A semiconductor image sensor device, comprising:

• a substrate having a first side and a second side that is opposite the first side;
• an interconnect structure disposed over the first side of the substrate;
• a plurality of radiation-sensing regions located in the substrate, the radiation-sensing regions being configured to sense radiation that enters the substrate from the second side, wherein the radiation-sensing regions are separated by a plurality of gaps;
• a periphery region adjacent to the plurality of radiation-sensing regions;
• a bonding pad region adjacent to the periphery region;
• a conductive pad disposed in the bonding pad region;
• and
• a plurality of radiation-blocking structures disposed over the second side of the substrate, wherein the radiation-blocking structures are respectively aligned with the plurality of gaps and at least a portion of the periphery region.