Image sensor with dual layer photodiode structure

An image sensor comprising:

• a substrate having a major surface for receiving impinging light;
• and
• a photodiode array disposed within the substrate, wherein the photodiode array comprises a 2×2 unit cell, the 2×2 unit cell for repeating within the substrate and comprising:
• a first photodiode comprising a first blue pixel in a top layer of the substrate disposed on top of a first red pixel in a bottom layer of the substrate, wherein the top layer is closer to the major surface than the bottom layer;
• a first insulating layer disposed between the red pixel and the first blue pixel;
• a magenta color filter disposed overlapping the first photodiode;
• a second photodiode comprising a first green pixel;
• a third photodiode comprising a second green pixel diagonally disposed from the second photodiode;
• and
• a fourth photodiode comprising a pixel selected from the group consisting of a first clear pixel, a first infrared pixel, a blue pixel in the top layer disposed on top of a green pixel in the bottom layer, a green pixel in the top layer and disposed on top of a red pixel in the bottom layer, a green pixel in the top layer and disposed on top of an infrared pixel in the bottom layer, and a blue pixel in the top layer and disposed on top of an infrared pixel in the bottom layer.

An image sensor comprising:

• a substrate having a major surface for receiving impinging light;
• and
• a photodiode array disposed within the substrate, wherein the photodiode array comprises a 2×2 unit cell, the 2×2 unit cell for repeating within the substrate and comprising:
• a first photodiode comprising a first blue pixel in a first layer of the substrate disposed on top of a first red pixel in a second layer of the substrate, wherein the first layer is closer to the major surface than the second layer;
• a first insulating layer disposed between the red pixel and the first blue pixel;
• a magenta color filter disposed overlapping the first photodiode;
• a second photodiode comprising a first pixel sensitive to at least two wavelengths of light;
• a third photodiode comprising a second pixel sensitive to the at least two wavelengths of light, wherein the third photodiode is diagonally disposed from the second photodiode;
• and
• a fourth photodiode comprising a pixel selected from a group consisting of a first green pixel, a clear pixel, a green pixel in the first layer and disposed on top of an infrared pixel in the second layer, and a blue pixel in the first layer and disposed on top of an infrared pixel in the second layer.

An image sensor comprising:

• a substrate having a major surface for receiving impinging light;
• and
• a photodiode array disposed within the substrate, wherein the photodiode array comprises a 2×2 unit cell, the 2×2 unit cell for repeating within the substrate and comprising:
• a first photodiode comprising a first blue pixel in a top layer of the substrate disposed on top of a first red pixel in a bottom layer of the substrate, wherein the top layer is closer to the major surface than the bottom layer;
• a first insulating layer disposed between the red pixel and the first blue pixel;
• a magenta color filter disposed overlapping the first photodiode;
• a second photodiode comprising a first green pixel;
• a third photodiode comprising a second green pixel, wherein diagonally disposed from the second photodiode;
• and
• a fourth photodiode comprising a first infrared pixel.