Stack type image sensor

A stack type image sensor comprising:

• a first image sensor unit that comprises a via isolation trench penetrating from a first surface of a first substrate to a second surface of the first substrate opposite to the first surface, a via isolation layer including an insulation material formed in the via isolation trench, a first insulation layer which is disposed on the first substrate and via isolation layer of the second surface of the first substrate, a first landing pad which is disposed in the first insulation layer, a first junction insulation layer which is disposed on the first landing pad and the first insulation layer, and a pixel circuit;
• a second image sensor unit that comprises a second insulation layer which is disposed on a second substrate, a second landing pad which is disposed in the second insulation layer, a second junction insulation layer which is disposed on the second landing pad and the second insulation layer and contacts the first junction insulation layer, and a logic circuit;
• a through via that is surrounded by the via isolation layer and electrically connects the first landing pad to the second landing pad;
• and
• an external connection through via that is connected to the first landing pad or the second landing pad,
• wherein each of the via isolation trench and the through via includes a first conductive layer.

A semiconductor device comprising:

• a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer;
• a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer;
• a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench;
• and
• a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer,
• wherein the third conductive layer is formed in the via isolation trench.