Deep well photodiode for nir image sensor
AssigneeSony Corporation
InventorsMuriel Cohen, Fred Brady, Thomas R. Ayers, Sungin Hwang
Life of this patent
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Abstract
An active pixel image sensor includes a photodiode structure which enables high near-infrared modulation transfer function and high quantum efficiency, with low pinning voltage for a medium- to large-size pixel. The photodiode includes a shallow photodiode region and a deep photodiode region both of a first dopant type, where the length of the shallow photodiode region is larger than the length of the deep photodiode region; and a shallow depleting region and a deep depleting region both of a second dopant type. The deep depleting region surrounds the deep photodiode region on at least two opposite sides.
Claims21
An image sensing device comprising:
- a photodiode region of a first dopant type, the photodiode region including a shallow photodiode region and a first deep photodiode region, wherein a length of the shallow photodiode region is larger than a length of the first deep photodiode region;
- and
- a depleting region of a second dopant type, the depleting region including a shallow depleting region and a deep depleting region, wherein the deep depleting region surrounds the first deep photodiode region on at least two opposite sides,
- wherein the second dopant type is of opposite dopant type to the first dopant type.
A method of manufacturing an image sensing device comprising:
- forming a photodiode region of a first dopant type, the photodiode region including a shallow photodiode region and a first deep photodiode region, wherein a length of the shallow photodiode region is larger than a length of the first deep photodiode region;
- and
- forming a depleting region of a second dopant type, the depleting region including a shallow depleting region and a deep depleting region, wherein the deep depleting region surrounds the first deep photodiode region on at least two opposite sides,
- wherein the second dopant type is of opposite dopant type to the first dopant type.
Dependencies are inferred from the claim text.