Tft array substrate and method for manufacturing the same

Abstract

The embodiments of the present disclosure relate to a TFT array substrate and method for manufacturing the same, including: forming a gate electrode on a transparent substrate, and forming a first insulating layer on the gate electrode covering the gate electrode and transparent substrate; forming a patterned IGZO layer on the first insulating layer; processing the IGZO layer to form source region and drain region; forming a second insulating layer on the IGZO layer; and forming contacting holes communicating with the source region and the drain region in the second insulating layer, and depositing electrodes in the contacting holes. The present disclosure need not form the second metal layer so as to omit photolithography and etching processes for forming the second metal layer, which may shorten the manufacturing process, improve the efficiency, and reduce dimension of the TFT.

Dependencies are inferred from the claim text.