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US 2015/0311215 A1Published application
One-Time Programmable Memory and Method for Making the Same
AssigneeKilopass Technology, Inc.
InventorHarry Shengwen Luan
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Abstract
A one time programmable nonvolatile memory formed from metal-insulator semiconductor cells. The cells are at the crosspoints of conductive gate lines and intersecting lines formed in a semiconductor substrate.
Claims11
A method of manufacturing a one-time programmable non-volatile memory cell comprising:
- forming a buried bitline in a substrate, the buried bitline of a first conductivity type;
- forming a dielectric layer over at least a portion of the buried bitline;
- forming a polysilicon gate layer over at least a portion of said dielectric layer;
- doping said polysilicon gate layer to cause said polysilicon gate layer to be a second conductivity type;
- and
- after said doping, etching said polysilicon gate layer to form a conductive gate over the dielectric layer, the conductive gate formed over a channel region under the conductive gate and dielectric layer.
3 more elements
A method of manufacturing a one-time programmable non-volatile memory cell comprising:
- forming a buried bitline in a substrate, the buried bitline of a first conductivity type;
- forming a dielectric layer over at least a portion of the buried bitline;
- and
- forming a metal gate over at least a portion of said dielectric layer, the conductive gate formed over a channel region under the conductive gate and dielectric layer.
1 more element
Dependencies are inferred from the claim text.