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US 2015/0311209 A1Published application
3-d non-volatile memory device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsSung Jin WHANG, Ki Hong LEE
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Abstract
A three-dimensional (3-D) non-volatile memory device includes a plurality of word line structures extended in parallel and including a plurality of interlayer dielectric layers and a plurality of word lines that are alternately stacked over a substrate, a plurality of channels protruding from the substrate configured to penetrate the plurality of interlayer dielectric layers and the plurality of word lines, and an air gap formed between the plurality of word line structures.
Claims15
1-11. (canceled)
A method of manufacturing a three-dimensional (3-D) non-volatile memory device, the method comprising:
- forming a plurality of memory cells stacked along channels protruded from a substrate, wherein the channels penetrate a plurality of first material layers and a plurality of second material layers that are alternately stacked over the substrate;
- forming a plurality of word line structures extended in parallel;
- forming a slit between the plurality of word line structures by etching the plurality of first material layers and the plurality of second material layers between neighboring channels;
- and
- forming an air gap between the plurality of word line structures by forming an insulating layer to cover a top of the slit.
2 more elements
Dependencies are inferred from the claim text.