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US 2015/0311208 A1Published application
Semiconductor device
OwnerJu-Youn KIMinventor
Life of this patent
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Abstract
Provided are a semiconductor device and a fabricating method of the semiconductor device. The semiconductor device may include an interlayer dielectric film formed on a substrate and including a trench, a gate insulating film formed in the trench, a first work function control film formed on the gate insulating film of the trench along bottom and sidewalls of the trench, a first metal gate pattern formed on the first work function control film of the trench and filling a portion of the trench, and a second metal gate pattern formed on the first metal gate pattern of the trench, the second metal gate pattern different from the first metal gate pattern.
Claims20
A semiconductor device comprising:
- a substrate;
- a first interlayer dielectric film disposed in a first region of the substrate and including a first trench;
- a second interlayer dielectric film disposed in a second region of the substrate and including a second trench;
- a first gate insulating film formed along sidewalls and a bottom surface of the first trench;
- a second gate insulating film formed along sidewalls and a bottom surface of the second trench;
- at least one first work function control layer disposed in the first trench and on the first gate insulating film;
- at least one second work function control layer disposed in the second trench and on the second gate insulating film;
- a first adhesive film disposed in the first trench and on the at least one first work function control layer;
- a second adhesive film disposed in the second trench and on the at least one second work function control layer;
- a first metal gate pattern and a second metal gate pattern filling the first trench, the second metal gate pattern being disposed on the first metal gate pattern, the first metal gate pattern being disposed on the first adhesive film;
- and
- a third metal gate pattern and a fourth metal gate pattern filling the second trench, the fourth metal gate pattern being disposed on the third metal gate pattern, the third metal gate pattern being disposed on the second adhesive film,
- wherein a shortest distance between a surface of the second metal gate pattern and the first adhesive film is less than a shortest distance between a surface of the fourth metal gate pattern and the second adhesive film.
10 more elements
A semiconductor device comprising:
- a substrate;
- a first interlayer dielectric film disposed in a first region of the substrate and including a first trench;
- a second interlayer dielectric film disposed in a second region of the substrate and including a second trench;
- a first gate insulating film formed along sidewalls and a bottom surface of the first trench;
- a second gate insulating film formed along sidewalls and a bottom surface of the second trench;
- at least one first work function control layer disposed in the first trench and on the first gate insulating film;
- at least one second work function control layer disposed in the second trench and on the second gate insulating film;
- a first adhesive film disposed in the first trench and on the at least one first work function control layer;
- a second adhesive film disposed in the second trench and on the at least one second work function control layer;
- a first metal gate pattern disposed on the first adhesive film and filling the first trench;
- and
- a second metal gate pattern disposed on the second adhesive film and filling the second trench,
- wherein a width of a bottom portion of the first metal gate pattern is greater than a width of a bottom portion of the second metal gate pattern.
10 more elements
A semiconductor device comprising:
- a substrate including a fin;
- a gate electrode formed on the fin;
- and
- an elevated source/drain disposed at two sides of the gate electrode,
- wherein the gate electrode includes:
- a first interlayer dielectric film disposed in a first region of the substrate and including a first trench;
- a second interlayer dielectric film disposed in a second region of the substrate and including a second trench;
- a first gate insulating film formed along sidewalls and a bottom surface of the first trench;
- a second gate insulating film formed along sidewalls and a bottom surface of the second trench;
- a first adhesive film disposed in the first trench;
- and
- a second adhesive film disposed in the second trench,
- wherein a shortest distance between the fin and the first adhesive film is less than a shortest distance between the fin and the second adhesive film.
10 more elements
Dependencies are inferred from the claim text.