Integrated Transistor Structure Having a Power Transistor and a Bipolar Transistor

An integrated transistor structure, comprising:

• an epitaxial layer on a semiconductor substrate;
• a power transistor formed in a first region of the epitaxial layer having a drain region, a source region and a body region shorted to the source region;
• a bipolar transistor formed in a second region of the epitaxial layer spaced apart from the power transistor;
• a first trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the power transistor, the first trench structure including a gate electrode spaced apart from a channel region of the power transistor by an insulating material;
• and
• a second trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor, the second trench structure including a trench electrode spaced apart from the epitaxial layer by an insulating material;
• wherein the gate electrode, base of the bipolar transistor, and emitter of the bipolar transistor are connected to different contacts isolated from one another.