A semiconductor device comprising an esd protection device, an esd protection circuitry, an integrated circuit and a method of manufacturing a semiconductor device

An ESD protection circuit for protecting an integrated circuit against ESD events received by the integrated circuit, the ESD protection circuit comprising:

• a first terminal for being coupled to an IO pad of the integrated circuit,
• a second terminal for being coupled to a most negative voltage available on the semiconductor device under normal operational condition or to a ground voltage,
• a third terminal for being coupled to a substrate of a semiconductor device wherein the ESD protection circuit is being manufactured,
• a common terminal,
• a first diode, an anode of the first diode being coupled to the first terminal and a cathode of the first diode being coupled to the common terminal,
• a second diode, an anode of the second diode being coupled to the second terminal and a cathode of the second diode being coupled to the common terminal, and
• a third diode having a high voltage breakdown voltage, an anode of the third diode being coupled to the third terminal and a cathode of the third diode being coupled to the common terminal.

Method of manufacturing a semiconductor device comprising an ESD protection device, the method comprising

• obtaining a p-doped isolated portion in a semiconductor substrate, the p-doped isolated portion having a top surface,
• manufacturing an N-doped region into the p-doped isolated portion, wherein the N-doped region extends from the top surface towards an opposite side of the p-doped isolated region and wherein the N-doped region subdivides the p-doped isolated portion into a first portion and a second portion,
• manufacturing a first p-doped region and a second p-doped region into, respectively, the first portion and the second portion, wherein the first p-doped region and the second p-doped region extend from the top surface into, respectively, the first portion and the second portion, the manufactured first p-doped region and the manufactured second p-doped region have a p-dopant concentration being higher than the p-dopant concentration of the p-doped isolated portion,
• manufacturing a first contact region and a second contact region into, respectively, the first p-doped region and the second p-doped region, the first contact region and the second contact region extends from the top surface into, respectively, the first p-doped region and the second p-doped region, the first contact region and the second contact region have a p-dopant concentration being larger than the p-dopant concentration of, respectively, the first p-doped region and the second p-doped region,
• providing a first electrical contact only to the first contact region and providing a second electrical contact only to the second contact region.