Semiconductor device comprising electrostatic discharge protection structure

Abstract

A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further comprises a first isolation layer on the first surface of the semiconductor body, and an electrostatic discharge protection structure on the first isolation layer. The electrostatic discharge protection structure has a first terminal and a second terminal. The semiconductor device further comprises a heat dissipation structure, which has a first end in contact with the electrostatic discharge protection structure and a second end which is in direct contact to an electrically isolating region.

Dependencies are inferred from the claim text.