Transistor formation using cold welding
AssigneeInternational Business Machines Corporation
InventorsCHENG-WEI CHENG, SHU-JEN HAN, MASAHARU KOBAYASHI, KO-TAO LEE, DEVENDRA K. SADANA, KUEN-TING SHIU
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Abstract
A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is joined to the second metal layer using a cold welding process wherein one of the first substrate and the second substrate includes a semiconductor channel layer for forming a transistor device.
Claims20
A method for fabrication of a semiconductor device, comprising:
- joining a first substrate assembly including a first substrate, a sacrificial layer, a semiconductor layer, and a first metal layer to a second substrate assembly including a second substrate and a second metal layer;
- wherein the first metal layer is joined to the second metal layer by cold welding;
- and
- removing at least a portion of the sacrificial layer using an etch process, wherein by said removing the sacrificial layer, the first substrate is released from a cold welded assembly of the semiconductor layer, the first metal layer, the second metal layer and the second substrate.
A method for fabrication of a semiconductor device, comprising:
- forming a sacrificial layer over a first substrate, the first substrate comprising a first semiconductor material;
- forming a channel layer on the sacrificial layer;
- forming a dielectric layer on the channel layer;
- forming a first metal layer on the dielectric layer;
- cold-welding the first metal layer to a second metal layer formed on a second substrate, the second substrate comprising a second semiconductor material;
- and
- etching to remove the sacrificial layer to expose the channel layer and separate the first substrate from an assembly including the channel layer, the dielectric layer, the first metal layer, the second metal layer, and the second substrate.
Dependencies are inferred from the claim text.