Binding wire and semiconductor package structure using the same
AssigneeBeijing FUNATE Innovation Technology Co., Ltd.
InventorsYU-QUAN WANG, LI QIAN
Life of this patent
Estimating the term…
Abstract
A semiconductor package structure includes a substrate, and a package preform. The substrate includes a plurality of conductive tracing wires. The package preform includes a semiconductor chip and a plurality of binding wires. The semiconductor chip includes a plurality of welding spots, and the welding spots are electrically connected with corresponding conductive tracing wires by the binding wires. Each binding wire comprises a carbon nanotube composite wire, the carbon nanotube composite wire includes a carbon nanotube wire and a metal layer. The carbon nanotube wire consists of a plurality of carbon nanotubes spirally arranged along an axial direction an axial direction of the carbon nanotube wire.
Claims17
A semiconductor package structure comprising:
- a substrate comprising a plurality of conductive tracing wires;
- a package perform comprising a semiconductor chip and a plurality of binding wires;
- a shielding layer covering the package preform;
- and
- a protective layer covering the shielding layer,
- wherein the semiconductor chip comprises a plurality of welding spots, and the plurality of welding spots are electrically connected with the plurality of conductive tracing wires via the plurality of binding wires;
- each of the plurality of binding wires comprises a carbon nanotube composite wire, and the carbon nanotube composite wire comprises a carbon nanotube wire and a metal layer coated on an outer surface of the carbon nanotube wire;
- and the carbon nanotube wire comprises a plurality of carbon nanotubes spirally arranged along an axial direction of the carbon nanotube wire.
A semiconductor package structure comprising:
- a substrate comprising a plurality of conductive tracing wires;
- and
- a package preform comprising a semiconductor chip and a plurality of binding wires,
- wherein the semiconductor chip comprises a plurality of welding spots, and the plurality of welding spots are electrically connected with the plurality of conductive tracing wires via the plurality of binding wires;
- each of the plurality of binding wires comprises a carbon nanotube composite wire;
- the carbon nanotube composite wire comprises a carbon nanotube wire and a metal layer coated on an outer surface of the carbon nanotube wire;
- the carbon nanotube wire comprises a plurality of carbon nanotubes spirally arranged along an axial direction of the carbon nanotube wire, a carbon nanotube wire twist ranges from about 10 r/cm to about 300 r/cm, and a carbon nanotube wire diameter ranges from about 1 micron to about 30 microns;
- and a metal layer thickness ranges from about 1 micron to about 5 microns.
A binding wire of a semiconductor package structure comprising a carbon nanotube composite wire, the carbon nanotube composite wire comprising:
- a carbon nanotube wire;
- and
- a metal layer coated on an outer surface of the carbon nanotube wire,
- wherein the carbon nanotube wire comprises a plurality of carbon nanotubes spirally arranged along an axial direction of the carbon nanotube wire, a carbon nanotube wire twist ranges from about 10 r/cm to about 300 r/cm, and a carbon nanotube wire diameter ranges from about 1 micron to about 30 microns;
- and a metal layer thickness ranges from about 1 micron to about 5 microns.
Dependencies are inferred from the claim text.