Structure and method of providing a re-distribution layer (rdl) and a through-silicon via (tsv)

A method for manufacturing a semiconductor device that includes a wafer, the method comprising:

• forming in the wafer an isolation trench that isolates a first section of the wafer from a second section of the wafer;
• forming non-conductive material in the isolation trench to partially fill the isolation trench;
• forming poly-silicon on the non-conductive material to substantially fill the isolation trench;
• forming a stand-off that includes poly-silicon and that is connected to the first section of the wafer and the poly-silicon in the isolation trench;
• and
• forming metal on the poly-silicon of the stand-off.

A method for manufacturing a semiconductor device that includes a wafer, the method comprising:

• forming in the wafer an isolation trench that isolates a first section of the wafer from a second section of the wafer;
• substantially filling the isolation trench with isolation trench material that includes poly-silicon;
• forming on a first surface of the wafer a stand-off that includes poly-silicon and that is connected to the first section of the wafer and the poly-silicon in the isolation trench;
• forming metal on the poly-silicon of the stand-off;
• thinning the wafer to allow the isolation trench to extend to a second surface of the wafer opposite to the first surface of the wafer;
• and
• forming on the second surface of the wafer a solder bump that is connected to the first section of the wafer.

A method for manufacturing a semiconductor device that includes a wafer, the wafer having a first section, a second section, an isolation trench that isolates the first and second sections from each other, and an isolation trench material that substantially fills the isolation trench and that includes poly-silicon, the method comprising:

• forming on a first surface of the wafer a stand-off that includes poly-silicon and that is connected to the first section of the wafer and the poly-silicon in the isolation trench;
• forming metal on the poly-silicon of the stand-off;
• thinning the wafer to allow the isolation trench to extend to a second surface of the wafer opposite to the first surface of the wafer;
• and
• forming on the second surface of the wafer a solder bump that is connected to the first section of the wafer.