Semiconductor Device Having Features to Prevent Reverse Engineering

An electronic device comprising:

• a base layer;
• a first layer located at least partially over the base layer;
• a second layer located at least partially over the first layer;
• a first metal layer located at least partially over the second layer, wherein one or more signal outputs of the electronic device are formed in the first metal layer;
• and
• a second metal layer located at least partially over the first metal layer, wherein the second metal layer is floating and one or more gate connection is connected to the second metal layer, wherein exposing the second metal layer to an ion beam results in at least one gate failure.

An electronic circuit comprising:

• a plurality of devices having connected floating gates;
• and
• a metal layer connected to the connected floating gates,
• wherein exposing the metal layer to an ion beam results in the failure of at least one of the plurality of devices.

An electronic device comprising:

• a base layer;
• a first layer located at least partially over the base layer;
• a second layer located at least partially over the first layer;
• a first metal layer located at least partially over the second layer, wherein one or more signal outputs of the electronic device are formed in the first metal layer;
• a second metal layer located at least partially over the first metal layer, wherein the second metal layer is floating and one or more gate connection is connected to the second metal layer,
• a third metal layer located at least partially over the second metal layer and separated from the second metal layer by a dielectric, wherein exposing the third metal layer to an ion beam results in at least one gate failure of the gates connected to the second metal layer.