Semiconductor device and method of producing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsTomoyuki Yamada, Fumio Ushida, Shigetoshi Takeda, Tomoharu Awaya, Koji Banno, Takayoshi Minami
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Abstract
A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.
Claims20
A semiconductor device comprising:
- a substrate;
- a first region that includes an element on the substrate;
- a frame-shaped shield that surrounds the first region;
- a first metal line extending along an edge of the substrate;
- a first insulating film formed over the first metal line, and;
- a groove formed in the second insulating film, the groove being not formed by a metal material, a width of the groove being equal to or smaller than a width of the first metal line, and the groove being covered by the first metal line in a plan view.
A semiconductor device comprising:
- a substrate;
- an first region that includes an element on the substrate;
- a first insulating film formed over the substrate;
- a first metal line extending along an edge of the substrate, the first metal line including a plurality of first wirings, and an upper most wiring of the first wirings being formed in the first insulating film;
- a second metal line extending along an edge of the substrate, the second metal line including a plurality of second wirings, an upper most wiring of the second wirings being formed in the first insulating film;
- a frame-shaped shield that surrounds the first region, the first metal line being located between the second metal line and the frame-shaped shield in a plan view, the frame shaped shield including a plurality of third wirings;
- a second insulating film formed on the first metal line and the second metal line, and;
- a groove formed in the second insulating film and located on the first metal line, the groove extending along with the first metal line.
Dependencies are inferred from the claim text.