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US 2015/0311157 A1Published application
Nanotube structure based metal damascene process
AssigneeInfineon Technologies AG
InventorsRavi Joshi, Juergen Steinbrenner
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Abstract
In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.
Claims15
A method for manufacturing a metallization layer on a substrate, the method comprising:
- depositing a catalyst material on the substrate, the catalyst material comprising a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material;
- forming a plurality of groups of nanotubes over the substrate so that at least one portion of the substrate between the groups of nanotubes is exposed, wherein the deposited catalyst material facilitates formation of the plurality of groups of nanotubes;
- forming metal over the at least one exposed portion of the substrate.
A semiconductor device comprising:
- a substrate;
- a catalyst material, comprising a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material;
- a plurality of groups of nanotubes arranged over the substrate;
- metal formed over the substrate between the plurality of groups of nanotubes.
1 more element
Dependencies are inferred from the claim text.