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US 2015/0311156 A1Published application
Systems and methods to enhance passivation integrity
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Abstract
A semiconductor device having enhanced passivation integrity is disclosed. The device includes a substrate, a first layer, and a metal layer. The first layer is formed over the substrate. The first layer includes a via opening and a tapered portion proximate to the via opening. The metal layer is formed over the via opening and the tapered portion of the first layer. The metal layer is substantially free from gaps and voids.
Claims20
A semiconductor device, comprising:
- a substrate;
- a layer disposed over the substrate and including an opening extending through the layer, the opening being laterally bound by inner sidewalls of the layer;
- a plurality of bar or pillar structures arranged in a peripheral portion of the opening and collectively laterally surrounding a central portion of the opening;
- and
- a metal body extending through the opening to separate neighboring bar or pillar structures within the plurality of bar or pillar structures from one another.
2 more elements
A semiconductor device, comprising:
- a substrate;
- a first layer disposed over the substrate;
- a second layer disposed over the first layer and differing in material composition from the first layer;
- and
- a metal body disposed over the second layer and including a central portion and a peripheral portion which extend downwardly through the first and second layers, wherein the central portion has a first lateral width across which the metal body is continuous, and wherein the peripheral portion has a plurality of ridges or pillars laterally separated from one another by a plurality of pillar or bar structures, respectively, wherein the pillar or bar structures collectively laterally surround the central portion of the metal body.
2 more elements
A semiconductor device, comprising:
- a substrate;
- a conductive layer over the substrate;
- a first layer disposed over the conductive layer, the first layer having an opening which extends through the first layer and which is laterally bound by inner sidewalls of the first layer;
- a tapered region disposed on the conductive layer along the inner sidewalls of the first layer but leaving a surface region of the conductive layer exposed;
- and
- a metal body disposed over the tapered region and over the first layer and extending downwardly between the tapered region to abut the surface region of the conductive layer.
3 more elements
Dependencies are inferred from the claim text.