Interconnection Structure And Method For Semiconductor Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Yuan Ting, Chung-Wen Wu
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Abstract
A semiconductor device is disclosed. The device includes a substrate, a first dielectric layer disposed over the substrate and a metal structure disposed in the first dielectric layer and below a surface of the first dielectric layer. The metal structure has a such shape that having an upper portion with a first width and a lower portion with a second width. The second width is substantially larger than the first width. The semiconductor device also includes a sub-structure of a second dielectric positioned between the upper portion of the metal structure and the first dielectric layer.
Claims20
A semiconductor device comprising:
- a substrate;
- a first dielectric layer disposed over the substrate;
- a metal structure disposed in the first dielectric layer, the metal structure having a shape that includes:
- an upper portion having a first width;
- and
- a lower portion having a second width that is larger than the first width;
- and
- a dielectric sub-structure positioned along the upper portion and the lower portion of the metal structure.
A device comprising:
- a first dielectric layer disposed over a semiconductor substrate;
- a metal structure disposed in the first dielectric layer, wherein the metal structure includes a first portion having a first width and a second portion having a second width that is different than the first width;
- a second dielectric layer disposed along the first and second portions of the metal structure;
- and
- a conductive feature disposed over the metal structure and the second dielectric layer such that the conductive feature physically contacts the metal structure and the second dielectric layer.
A device comprising:
- a first dielectric layer disposed over a semiconductor substrate;
- a first conductive feature disposed in the first dielectric layer, wherein the first conductive feature includes a first portion having a first height and a second portion having a second height that is different than the first height;
- a second dielectric layer disposed along a sidewall of the first portion and a top surface of the second portion;
- and
- a second conductive feature disposed over the first conductive feature and the second dielectric layer such that the second conductive feature physically contacts the first conductive feature and the second dielectric.
Dependencies are inferred from the claim text.