Interconnect Structure Having Air Gap and Method of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Chien Chi, Hung-Wen Su
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Abstract
A method for forming a semiconductor device includes forming a first dielectric layer overlying a substrate, forming at least a first opening in the first dielectric layer, forming a conformal dense layer lining the at least first opening in the first dielectric layer, forming a barrier layer overlying the conformal dense layer, forming a conductive feature in the at least first opening, removing a portion of the first dielectric layer between any two adjacent conductive features to form a second opening, wherein the second opening exposes the conformal dense layer between the two adjacent conductive features, and depositing between the two adjacent conductive features a second dielectric layer having an air gap formed therein.
Claims21
A method for forming a semiconductor device, comprising:
- forming a first dielectric layer overlying a substrate;
- forming at least a first opening in the first dielectric layer;
- forming a conformal dense layer lining the at least first opening in the first dielectric layer;
- forming a barrier layer overlying the conformal dense layer;
- forming a conductive feature in the at least first opening;
- removing a portion of the first dielectric layer between any two adjacent conductive features to form a second opening, wherein the second opening exposes the conformal dense layer between the two adjacent conductive features;
- and
- depositing between the two adjacent conductive features a second dielectric layer having an air gap formed therein, wherein at least a portion of the second dielectric layer is deposited in a bottom portion of the second opening.
A method for forming an interconnect structure, comprising:
- forming first and second openings in a first dielectric layer overlying a substrate;
- forming a conformal dense layer on the sidewalls of the first and second openings;
- forming a barrier layer at the bottom and sidewalls of the first and second openings;
- filling the first and second openings with a conductive layer to form first and second conductive features, respectively;
- removing a portion of the first dielectric layer between the first and second conductive features to form a third opening, wherein the third opening:
- is formed by depositing, exposing, and developing a photoresist material to remove the portion of the first dielectric layer between the first and second conductive features;
- and
- exposes the conformal dense layer between the first and second conductive features;
- and
- depositing a second dielectric layer having an air gap between the first and second conductive features.
18-20. (canceled)
A method for forming an interconnect structure, comprising:
- forming a patterned first dielectric layer having a first and second trench formed therein;
- lining the first trench and the second trench with a dielectric liner having a dielectric constant of from about 2.5 to about 6.0;
- filling the lined first trench and the lined second trench with a first conductor and a second conductor respectively;
- removing a portion of the first dielectric layer between the first conductor and the second conductor thereby exposing respective portions of the dielectric liner lining the first trench and the dielectric liner lining the second trench;
- forming an etch stop layer over the first and second conductor and the dielectric liner;
- and
- forming a second dielectric layer over the etch stop layer, the second dielectric layer having an air gap therein between the first conductor and the second conductor.
Dependencies are inferred from the claim text.