Metal Contact Structure and Method of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Hung Lin, Sheng-Hsuan Lin, Chih-Wei Chang, You-Hua Chou
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Abstract
A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.
Claims21
A semiconductor device comprising:
- a silicide layer over a substrate;
- a metal plug in an opening defined by a dielectric layer over the substrate;
- a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer;
- a second metal layer over the first metal layer;
- and
- an amorphous layer between the first metal layer and the second metal layer.
A semiconductor device comprising:
- a cobalt (Co) or nickel (Ni) layer in an opening defined by a dielectric layer over a substrate comprising silicon;
- a copper diffusion barrier layer over the cobalt or nickel layer;
- an amorphous layer between the cobalt or nickel layer and the copper diffusion barrier layer;
- a metal plug comprising copper in the opening;
- and
- a silicide layer between the metal plug and the substrate, the silicide layer comprising cobalt silicide (CoSi) or nickel silicide (NiSi).
-20. (canceled)
A semiconductor device comprising:
- a substrate comprising silicon;
- a dielectric layer formed over the substrate with an opening defined in the dielectric layer;
- a first metal layer formed in the opening;
- an amorphous layer formed over the first metal layer;
- a second metal layer formed in the opening over the amorphous layer;
- and
- a third metal layer formed over the second metal layer.
Dependencies are inferred from the claim text.