Semiconductor device with combined passive device on chip back side

A method of manufacturing a semiconductor chip, the method comprising:

• forming a semiconductor device on a first side of a substrate;
• forming an electrically insulating layer on at least a portion of a second side of the substrate, wherein the second side is opposite the first side;
• and
• forming a passive device on at least a portion of the electrically insulating layer, wherein the passive device is electrically insulated from the semiconductor device.

A method of manufacturing a semiconductor chip, the method comprising:

• forming a semiconductor device on a first side of a substrate;
• forming an electrically insulating layer on at least a portion of a second side of the substrate;
• forming a passive device on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the passive device is electrically insulated from the semiconductor device;
• and
• mechanically coupling, a lead frame to the semiconductor device and the passive device such that the semiconductor device and the passive device are electrically isolated from each other.

A method of manufacturing a semiconductor chip package, the method comprising:

• forming a semiconductor device on a first side of a substrate;
• forming an electrically insulating layer on at least a portion of a second side of the substrate;
• forming a capacitor device on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the capacitor device is electrically insulated from the semiconductor device;
• and
• forming a chip carrier including at least a first portion and a second portion, wherein the first portion is electrically isolated from the second portion, and wherein the chip carrier comprises an electrically conductive material.