Wiring substrate and method of manufacturing the same, and semiconductor device and method of manufacturing the same
AssigneeOlympus Corporation
InventorsChihiro Migita, Hiroshi Kikuchi, Yoshiaki Takemoto, Yoshitaka Tadaki
Life of this patent
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Abstract
A wiring substrate may include: a base having a predetermined thickness; a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base; a wiring provided in the base and electrically connected to the electrode portions; and a resin layer formed on the base to fill between the plurality of electrode portions. An upper surface of the resin layer may be formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface.
Claims6
A wiring substrate comprising:
- a base having a predetermined thickness;
- a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base;
- a wiring provided in the base and electrically connected to the electrode portions;
- and
- a resin layer formed on the base to fill between the plurality of electrode portions,
- wherein an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface, and
- wherein the resin layer is at substantially the same height as the maximum height of the electrode portion when heated to a predetermined temperature and expanded.
A semiconductor device comprising:
- a wiring substrate including:
- a base having a predetermined thickness;
- a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base;
- a wiring provided in the base and electrically connected to the electrode portions;
- a resin layer formed on the base to fill between the plurality of electrode portions;
- and
- a semiconductor element provided in the base,
- wherein an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface, and
- wherein the resin layer is at substantially the same height as the maximum height when heated to a predetermined temperature and expanded.
A semiconductor device comprising:
- a wiring substrate including:
- a base having a predetermined thickness;
- a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base;
- a wiring provided in the base and electrically connected to the electrode portions;
- a resin layer formed on the base to fill between the plurality of electrode portions;
- and
- a semiconductor chip or a semiconductor package provided in the base,
- wherein an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface, and
- wherein the resin layer is at substantially the same height as the maximum height when heated to a predetermined temperature and expanded.
Dependencies are inferred from the claim text.