Semiconductor system, device and structure with heat removal
AssigneeMonolithic 3D Inc.
InventorsDeepak Sekar, Zvi Or-Bach, Brian Cronquist
Life of this patent
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Abstract
A 3D device including: a first layer including first transistors, the first layer overlaid by at least one interconnection layer; a second layer including second transistors, the second layer overlaying the interconnection layer; a plurality of electrical connections connecting the second transistors with the interconnection layer; and at least one thermally conductive and electrically non-conductive contact, where the at least one thermally conductive and electrically non-conductive contact thermally connects the second layer to a top or bottom surface of the 3D device.
Claims20
A 3D device comprising:
- a first layer comprising first transistors, said first layer overlaid by at least one interconnection layer;
- a second layer comprising second transistors, said second layer overlaying said interconnection layer;
- a plurality of electrical connections connecting said second transistors with said interconnection layer;
- and
- at least one thermally conductive and electrically non-conductive contact,
- wherein said at least one thermally conductive and electrically non-conductive contact thermally connects said second layer to a top or bottom surface of said 3D device.
A system, comprising:
- a 3D device, said 3D device comprising:
- a first layer comprising first transistors, said first layer overlaid by a first interconnection layer;
- a second layer comprising second transistors, said second layer overlaying said first interconnection layer;
- a plurality of second interconnection layers overlaying said second layer;
- a plurality of electrical connections connecting at least one of said second interconnection layers with said first interconnection layer;
- and
- a plurality of thermally conducting paths from said second transistors to a top or bottom surface of said 3D device.
A system, comprising:
- a 3D device, said 3D device comprising:
- a first layer comprising first transistors, said first layer overlaid by at least one interconnection layer,
- a second layer comprising second transistors, said second layer overlaying said interconnection layer;
- a plurality of electrical connections connecting said second transistors with said interconnection layer;
- said plurality of electrical connections further comprising:
- a power distribution grid providing power to said second transistors, and
- a plurality of thermally conducting paths from said power distribution grid to a top or bottom surface of said 3D device,
- wherein said second layer has a thickness less than 2 microns.
Dependencies are inferred from the claim text.