Profile of Through Via Protrusion in 3DIC Interconnect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJiung Wu, Kuan-Liang Lai, Ming-Tsu Chung, Hong-Ye Shih, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou, Shin-Puu Jeng, Chen-Hua Yu
Life of this patent
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Abstract
An interconnect structure for an integrated circuit, such as a three dimensional integrated circuit (3DIC), and a method of forming the same is provided. An example interconnect structure includes a substrate, a through via extending through the substrate, and a liner disposed between the substrate and the through via. The substrate includes a tapered profile portion. The tapered profile portion abuts the liner.
Claims21
-15. (canceled)
A method of forming an interconnect structure, comprising:
- providing a substrate having a through via isolated from the substrate by a liner, the liner interposed between the through via and the substrate;
- selectively planarizing a backside surface of the substrate to generate a tapered profile portion, the tapered profile portion adjacent to the liner;
- and
- forming a dielectric capping layer over tapered profile portion of the substrate and a backside surface of the through via.
A method of forming an interconnect structure, the method comprising:
- selectively planarizing a surface of a substrate, the substrate having a through via therein, the planarizing exposing the through via and recessing the surface of the substrate such that the through via protrudes from the surface of the substrate, the surface of the substrate sloping toward a protruding end of the through via;
- and
- forming a dielectric capping layer over the surface of the substrate adjacent the through via.
A method of forming an interconnect structure, the method comprising:
- forming an opening in a substrate, the opening extending into the substrate from a first surface;
- forming a liner in the opening;
- forming a conductive material over the liner in the opening;
- recessing a second surface of the substrate to expose the conductive material, thereby forming a through via, the second surface of the substrate adjacent the through via extending toward a protruding end of the through via;
- and
- forming a dielectric layer over the second surface of the substrate.
Dependencies are inferred from the claim text.