Semiconductor structure and fabricating method thereof

A method for fabricating a semiconductor structure,

• the method comprising:
• forming a deep trench from a top surface of a wafer substrate to define a conductive region in the wafer substrate;
• doping the conductive region with a dopant;
• filling the deep trench with an insulation material to form a deep trench insulator;
• and
• thinning the wafer substrate from a bottom surface of the wafer substrate to expose the deep trench insulator and isolate the conductive region to form a conductive pillar.

A method for fabricating a semiconductor structure comprising:

• defining a conductive region in a wafer substrate by forming a deep trench from a top surface of the wafer substrate;
• forming a deep trench insulator by filling the deep trench with an insulation material;
• doping the conductive region with a dopant;
• forming a plurality of semiconductor devices on the top surface of the wafer substrate;
• depositing a top interlayer dielectric layer all over the top surface of the wafer substrate;
• forming a plurality of top contact vias in the top interlayer dielectric layer and a top metal layer over the top interlayer dielectric layer, wherein the plurality of top contact vias and the top metal layer are electrically connected to the conductive region;
• thinning the wafer substrate from a bottom surface of the wafer substrate to expose the deep trench insulator and isolate the conductive region to form a conductive pillar;
• depositing a bottom interlayer dielectric layer over the bottom surface of the wafer substrate;
• and
• forming a plurality of bottom contact vias in the bottom interlayer dielectric layer and a bottom metal layer over the bottom interlayer dielectric layer, wherein the plurality of bottom contact vias and the bottom metal layer are electrically connected to the conductive pillar.