Semiconductor device and method of manufacturing the same
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorsJianhua JU, ShaoFeng YU
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Abstract
A method of manufacturing a semiconductor CMOS device is provided. The method includes providing a semiconductor substrate, forming a first fin in a PMOS region and a second fin in an NMOS region of the semiconductor substrate, forming shallow trench isolation structures on the semiconductor substrate on opposite sides of the first and second fins, and performing ion implantation so as to implant germanium atoms into the first fin to form a silicon-germanium layer in the PMOS region. The silicon-germanium layer is used to adjust a work function of the PMOS region. The method further includes forming a stack structure in the PMOS region and the NMOS region, whereby the stack structure comprises a work function layer and a metal gate.
Claims15
A method of manufacturing a semiconductor CMOS device, comprising:
- providing a semiconductor substrate;
- forming a first fin in a PMOS region and a second fin in an NMOS region of the semiconductor substrate;
- forming shallow trench isolation structures on the semiconductor substrate on opposite sides of the first and second fins;
- performing ion implantation so as to implant germanium atoms into the first fin to form a silicon-germanium layer in the PMOS region, wherein the silicon-germanium layer is used to adjust a work function of the PMOS region;
- and
- forming a stack structure in the PMOS region and the NMOS region, wherein the stack structure comprises a work function layer and a metal gate.
A semiconductor CMOS device, comprising:
- a semiconductor substrate including a PMOS region and an NMOS region;
- a first fin disposed in the PMOS region and a second fin disposed in the NMOS region;
- and
- a silicon-germanium layer disposed in the first fin in the PMOS region, wherein the silicon-germanium layer is used to adjust a work function of the PMOS region.
Dependencies are inferred from the claim text.