Selectively degrading current resistance of field effect transistor devices
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Effendi Leobandung, Dieter Wendel, Tenko Yamashita
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Abstract
A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.
Claims31
A method comprising:
- selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET, the second finFET being electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.
A semiconductor device, comprising:
- a first finFET having a first channel charge type;
- a second finFET having the first channel charge type, the second finFET having a material formed on a fin of the second finFET to increase a current resistance of the second finFET relative to the first finFET;
- and
- one or more third finFETs having a second channel charge type opposite the first channel charge type, the one or more third finFETs being electrically connected to the second finFET, such that a current flow through the one or more third finFETs is a multiple greater than one of a current flow through the second finFET.
A method for selectively degrading a current capacity of a finned-field-effect-transistor (finFET), comprising:
- forming a first finFET and a second finFET on a substrate;
- implanting the second finFET with an implantation material selected to alter an ability of a fin of the second finFET to grow an epitaxial layer;
- and
- epitaxially growing a first epitaxial layer on a fin of the first finFET and a second epitaxial layer on a fin of the second finFET, the first epitaxial layer having a height different than the second epitaxial layer due to the implantation material in the fin of the second finFET.
A finFET semiconductor device, comprising:
- a first finFET having a first fin, a first epitaxial layer on the first fin, and a first gate;
- and
- a second finFET having a second fin, a second epitaxial layer on the second fin, and a second gate,
- wherein the first and second fins have a same height, the second fin includes an implantation material that alters an ability of an epitaxial layer to grow on the second fin relative to the first fin, and the second epitaxial layer has a height different than the first epitaxial layer based on the implantation material.
Dependencies are inferred from the claim text.