Semiconductor device and method for manufacturing the same

Abstract

Provided are a semiconductor device and a method for manufacturing the same. An example method may include: forming a first semiconductor layer and a second semiconductor layer sequentially on a substrate, wherein the first semiconductor layer is doped; patterning the second and first semiconductor layers to form an initial fin; forming a dielectric layer on the substrate to substantially cover the initial fin, wherein a portion of the dielectric layer on top of the initial fin has a thickness sufficiently less than that of a portion of the dielectric layer on the substrate; etching the dielectric layer back to form an isolation layer, wherein the isolation layer partially exposes the first semiconductor layer, thereby defining a fin above the isolation layer; and forming a gate stack intersecting the fin on the isolation layer.

Dependencies are inferred from the claim text.